elektronische bauelemente SSQF04N60J 4a, 600v, r ds(on) 3 n-ch enhancement mode power mosfet 11-dec-2015 rev. a page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. ito - 220 j rohs compliant product a suffix of -c specifies halogen free description this advanced high voltage mosfet is designed to wi thstand high energy in the avalanche mode and switch effici ently. this new high energy device also offers a drain-to-source di ode with fast recovery time. designed for high voltage, high spee d switching applications such as power supplies, converters, po wer motor controls and bridge circuits features high current rating lower r ds(on) lower capacitance lower total gate charge tighter vsd specifications specified avalanche energy absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 600 v gate-source voltage v gs 30 v continuous drain current i d 4 a continuous drain-source diode forward current i s 4 a single pulsed avalanche energy 1 e as 260 mj maximum lead temperature for soldering purposes@ 1/8 from case for 5 seconds t l 260 c operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating thermal resistance from junction to ambient r ja 62.5 c/ w 1 gate 3 source 2 drain millimeter millim eter ref. min. max. ref. min. max. a 14.80 15.20 h 3.60 4.00 b 9.96 10.36 j 1.30 ref. c 13.20 ref. k 0.50 0.75 d 4.30 4.70 l 2.54 ref. e 2.80 3.20 m 2.70 ref. f 2.50 2.90 n 3.5 ref. g 0.50 0.75
elektronische bauelemente SSQF04N60J 4a, 600v, r ds(on) 3 n-ch enhancement mode power mosfet 11-dec-2015 rev. a page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j =25c unless otherwise specified) parameter symbol min. typ. max. unit test condition off characteristics drain-source breakdown voltage b vdss 600 - - v v gs =0, i d =250 a diode forward voltage 2 v sd - - 1.5 v v gs =0, i s =4a drain-source leakage current i dss - - 25 a v ds =600v, v gs =0 gate-source forward leakage current 2 i gssf - - 100 na v ds =0v, v gs =30v gate-source reverse leakage current 2 i gssr - - -100 na v ds =0v, v gs = -30v on characteristics 2 gate-threshold voltage v gs(th) 2 - 4 v v ds =v gs , i d =250 a static drain-source on-resistance r ds(on) - 2 3 v gs =10v, i d =2a forward transconductance g fs 2 2.6 - s v ds =50v, i d =2a dynamic characteristics input capacitance c iss - 540 - output capacitance c oss - 125 - reverse transfer capacitance c rss - 8 - pf v ds =25v v gs =0 f=1mhz switching characteristics total gate charge q g - 5 - gate-source charge q gs - 2.7 - gate-drain charge q gd - 2 - nc v ds =480v v gs =10v i d =4a turn-on delay time t d(on) - 12 - rise time t r - 7 - turn-off delay time t d(off) - 19 - fall time t f - 10 - ns v dd =300v v gs =10v r g =9.1 i d =4a notes: 1. e as condition : l=30mh, i l =4a, v dd =100v, v gs =10v, r g =25 , starting t j =25c. 2. pulse test : pulse width Q 300 s, duty cycle Q 2%.
elektronische bauelemente SSQF04N60J 4a, 600v, r ds(on) 3 n-ch enhancement mode power mosfet 11-dec-2015 rev. a page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
|
